NCE40H12K Datasheet, MOSFET, NCE Power Semiconductor

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NCE40H12K Features and benefits

* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.

NCE40H12K Application

General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell desi.

NCE40H12K Description

The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V <.

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